X. A. Tran

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

H.Y. Yu, W. J. Liu, Zhongrui Wang et al. · IEEE Electron Device Letters · 2010 · 131 citations

Engineering, Electrical Engineering, Materials Science +17

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

Zhongrui Wang, Weiguang Zhu, An Du et al. · IEEE Transactions on Electron Devices · 2012 · 86 citations

Engineering, Materials Engineering, Materials Science +16

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Bin Gao, Jinfeng Kang, Y. S. Chen et al. · 2011 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

X. A. Tran, H.Y. Yu, Yee‐Chia Yeo et al. · IEEE Electron Device Letters · 2011 · 60 citations

Engineering, Electrical Engineering, Materials Science +15

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

X. A. Tran, W. J. Liu, Yee‐Chia Yeo et al. · IEEE Electron Device Letters · 2012 · 53 citations

Engineering, Electrical Engineering, Materials Science +14