W. J. Liu

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

H.Y. Yu, W. J. Liu, Zhongrui Wang et al. · IEEE Electron Device Letters · 2010 · 131 citations

Engineering, Electrical Engineering, Materials Science +17

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

X. A. Tran, H.Y. Yu, Yee‐Chia Yeo et al. · IEEE Electron Device Letters · 2011 · 60 citations

Engineering, Electrical Engineering, Materials Science +15

Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

W. J. Liu, H.Y. Yu, Sipei Xu et al. · IEEE Electron Device Letters · 2010 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Multideposition Multiroom-Temperature Annealing via Ultraviolet Ozone for HfZrO High- $\kappa$ and Integration With a TiN Metal Gate in a Gate-Last Process

Ling Wu, H.Y. Yu, K. S. Yew et al. · IEEE Transactions on Electron Devices · 2011 · 15 citations

Engineering, Electrical Engineering, Materials Science +17