2008 · 27 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersPower AmplifiersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBandwidthBreakdown VoltageGallium Nitride (Gan) MaterialsGallium Nitride Power AmplifiersGan-based High-frequency DevicesMicrowave DevicesPower Amplifier DesignWideband Amplifiers
We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 – 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100μs pulse width obtains an output power in the range of 401 – 446 W over the band with a drain efficiency of 48 – 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications.
11
30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations
The toughest transistor yet [GaN transistors]
L.F. Eastman, Umesh K. Mishra · IEEE Spectrum · 2002 · 231 citations