Matthew Poulton

High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications

R. Vetury, Ying Wei, D.S. Green et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 38 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

J. R. Shealy, J. Smart, Matthew Poulton et al. · 2003 · 38 citations

Wide-bandgap Semiconductor, Power Switches, Electrical Engineering +13

Wideband 400 W pulsed power GaN HEMT amplifiers

K. Krishnamurthy, Jan M. L. Martin, B. Landberg et al. · 2008 · 27 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

A Classic Nonlinear FET Model for GaN HEMT Devices

Faramarz Kharabi, Matthew Poulton, D. Halchin et al. · 2007 · 21 citations

Device Modeling, Agilent Eehemt, Electrical Engineering +10

Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates

Jeffrey D. Brown, Shawn R. Gibb, Johnathan McKenna et al. · ECS Transactions · 2006 · 20 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13