IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 38 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Semiconductor DevicesSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsClass Ab BiasingGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGan-based High-frequency DevicesHigh-electron-mobility TransistorsPower DensityPower OutputPower Output Measurement
We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate widths. As a measure of the status of GaN technology achieved in this work, small periphery 150 μm HEMT demonstrated a continuous wave (CW) output power density of 22.7 W/mm at 2.14 GHz with power added efficiency (PAE) of 54% when biased at a drain-source voltage (VDS) of 80 V. As a demonstration of the scalability of this technology, a 20-mm-wide device exhibited 100 W CW output power and a simultaneous peak PAE of 55.3% at 2.14 GHz when biased at class AB and V Ds =48V. WCDMA measurements on the 20mm part demonstrated ACP of −35 dBc at 42.5 dBm output power and 30% PAE under the same bias condition. Analysis of FP related performance tradeoffs are also presented in this work.
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