Publication | Closed Access
Gallium nitride (GaN) HEMT's: progress and potential for commercial applications
38
Citations
3
References
2003
Year
Unknown Venue
Wide-bandgap SemiconductorPower SwitchesElectrical EngineeringEngineeringRf SemiconductorNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxidePower ElectronicsGan TransistorsMicroelectronicsGallium NitrideCategoryiii-v SemiconductorRf Micro Devices
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
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