Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

Abstract

Abstract High-electronic quality hydrogenated amorphous silicon-nitrogen (a-Si1-xNx: H) films with an energy gap in the range 1.9-2.7eV have been deposited by plasma-enhanced chemical vapour deposition in silane-ammonia gas mixtures at two different gas residence times and in hydrogen-diluted silane-ammonia gas mixtures. Compositional, structural, electrical and optical properties have been investigated. For the first time the effects of hydrogen dilution of SiH4 + NH3 gas mixtures on the a-Si1-xNx: H network is reported. We have observed that hydrogen dilution decreases hydrogen incorporation and increases nitrogen incorporation, promoting a higher connectivity of the a-Si1-xNx :H network. All films show good electronic properties, comparable with or superior to those of amorphous silicon-carbon films, which are improved in films deposited from hydrogen-diluted gas mixtures.