R. Galloni

The nature of electrically inactive antimony in silicon

A. Nylandsted Larsen, Flemming Pedersen, G. Weyer et al. · Journal of Applied Physics · 1986 · 84 citations

Engineering, Materials Engineering, Materials Science +17

Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

Fabrizio Giorgis, F. Giuliani, Candido Fabrizio Pirri et al. · Philosophical Magazine B · 1998 · 77 citations

Engineering, Materials Engineering, Materials Science +17

Optoelectronic properties, structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma

A. Desalvo, Fabrizio Giorgis, Candido Fabrizio Pirri et al. · Journal of Applied Physics · 1997 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping

R. Galloni, Angela Sardo · Review of Scientific Instruments · 1983 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films

F. Demichelis, G. Crovini, Candido Fabrizio Pirri et al. · Philosophical Magazine B · 1994 · 36 citations

Engineering, Materials Engineering, Materials Science +17