P. Rava

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 332 citations

Semiconductors, N-type Inp, Optical Materials +14

Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

Fabrizio Giorgis, F. Giuliani, Candido Fabrizio Pirri et al. · Philosophical Magazine B · 1998 · 77 citations

Optical Materials, Engineering, Silane-ammonia Gas Mixtures +16

A new modular multichamber plasma enhanced chemical vapor deposition system

A. Madan, P. Rava, R.E.I. Schropp et al. · Applied Surface Science · 1993 · 71 citations

Materials Science, Engineering, Applied Physics +4

Optoelectronic properties, structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma

A. Desalvo, Fabrizio Giorgis, Candido Fabrizio Pirri et al. · Journal of Applied Physics · 1997 · 57 citations

Engineering, Optoelectronic Devices, Thin Film Process Technology +18

Optical properties of hydrogenated amorphous silicon

F. Demichelis, E. Minetti-Mezzetti, Alberto Tagliaferro et al. · Journal of Applied Physics · 1986 · 48 citations

Optical Materials, Engineering, Silicon On Insulator +17