Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

Abstract

The transient radiation response of single- and multiple-gate fully depleted silicon-on-insulator (FD SOI) transistors is investigated with heavy ion and pulsed laser experiments. Very fast transients are shown on single-gate devices while non-planar Omega-gate transistors exhibit longer transient pulses. The current process of multi-gate devices, which includes long resistive access to source and drain electrodes, is shown to be responsible for these longer pulses, they are not an intrinsic characteristic of multi-gate devices. The charge collection mechanisms are discussed with 3-D device simulations as a function of device architecture and design. Mixed-mode simulations are used to present trends on the sensitivity to single event upset and single event transient of elementary cells based on a 50 nm FD SOI technology.