IEEE Transactions on Microwave Theory and Techniques · 2004 · 40 citations · 15 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesBulk MicromachiningHigh-frequency Semiconductor DevicesMicromachiningMicrowave Integrated CircuitsMicrowave Transmission LinesWaveguidesCoplanar WaveguidesDeep Reactive Ion EtchingIntegrated WaveguidesMicromachining Of Silicon WafersMillimeter-wave Integrated CircuitsPlanar Microwave CircuitsSilicon WaveguidesTransition Design
A fully micromachined finite-ground coplanar (FGC) line-to-waveguide transition for W-band applications has been designed, fabricated, and tested. The transition utilizes a printed E-plane probe, inserted into the broad sidewall of a micromachined waveguide. This type of transition plays an important role in many applications where coupling between the popular FGC line and a waveguide is required. Excellent performance across the entire W-band of such a transition is presented in this paper. The investigated waveguide, micromachined in silicon using the deep reactive ion etching technique, demonstrates its potential as an alternative to costly conventional waveguides at high frequencies. A similar transition with a micromachined waveguide formed via bulk micromachining using a wet etchant is also demonstrated. The free-standing probe utilized in this second transition proves the potential of such transitions to be applicable well into the submillimeter and terahertz range.
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Kuo‐Shen Chen, Arturo A. Ayón, Xin Zhang et al. · Journal of Microelectromechanical Systems · 2002 · 246 citations
J. Digby, C.E. McIntosh, G.M. Parkhurst et al. · IEEE Transactions on Microwave Theory and Techniques · 2000 · 92 citations