Electronics Letters · 1995 · 89 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesOptical DetectorsOptoelectronic DevicesPhotodetectorsSemiconductor DetectorsSemiconductor HeterostructuresSemiconductor PhysicsDetector ModelingGallium Nitride (Gan) MaterialsHeterostructure OptoelectronicsHeterostructure PhotodetectorsPhotodetectionPhotodetector MaterialsPhotodetector ResponsivityResponse Time
The authors report a 0.2 µm gate GaN/AlGaN heterostructure field effect transistor which operates as a visible blind photodetector with responsivities as high as 3000 A/W for wavelengths from 200 to 365 nm. The responsivity falls by three orders of magnitude for wavelengths greater than 365 nm. Using a CW He-Cd laser (wavelength 325 nm), we measured a response time of order 0.2 ms. A model explaining the detector operation is in good agreement with the experimental data.
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Schottky barrier photodetector based on Mg-doped <i>p</i>-type GaN films
M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1993 · 188 citations