Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 410 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +5

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

Julia W. P. Hsu, Michael J. Manfra, R. J. Molnar et al. · Applied Physics Letters · 2002 · 299 citations

Materials Science, Excess Reverse-bias Leakage, Electrical Engineering +12

GaN-based optoelectronics on silicon substrates

A. Krost, A. Dadgar · Materials Science and Engineering B · 2002 · 294 citations

Electrical Engineering, Engineering, Applied Physics +4

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 270 citations

Materials Science, Semiconductors, Electrical Engineering +13

Radiation effects in GaN materials and devices

A. Y. Polyakov, S. J. Pearton, Patrick Frenzer et al. · Journal of Materials Chemistry C · 2012 · 224 citations

Wide-bandgap Semiconductor, Electrical Engineering, Point Defects +11