IEEE Transactions on Electron Devices · 2002 · 64 citations · 55 references
EngineeringElectrical EngineeringMaterials ScienceComputational PhysicsElectronic MaterialsSemiconductor DevicesDevice ModelingDevice SimulationMonte Carlo SimulationNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsDrift-diffusion ModelingDrift-diffusion SimulationHydrodynamic Device ModelingMonte Carlo Device SimulationNoise Analysis In Integrated CircuitsNoise ParametersNoise Prediction ModelsNoise Sources In Semiconductor Materials
Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD) noise models are presented for Si and SiGe devices, which are based on the new concept of modified Langevin forces, which ensure that the DD and HD models exactly reproduce the fluctuations of the full-band Monte Carlo (MC) model under homogeneous bulk conditions. All transport and noise parameters are generated by MC bulk simulations and stored in lookup tables, which must be built only once. As a consequence, the accuracy of the DD and HD models is improved without an increase in CPU time compared to models with analytical expressions for the parameters. Considering the full-band structure, a remarkably strong dependence of noise on crystal orientation is found.
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High-mobility Si and Ge structures
F. Schäffler · Semiconductor Science and Technology · 1997 · 765 citations
High speed semiconductor devices
III-Vs Review · 1991 · 533 citations
Engineering, Computer Engineering, Electrical Engineering +12