The Hooge parameters of n⁺-p-n and p⁺-n-p silicon bipolar transistors

Abstract

We establish here again the fact that the Hooge parameters of NEC57807 n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -p-n and in GE82 p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n-p silicon bipolar transistors are orders of magnitude smaller than the value 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> postulated earlier. In the NEC57807 devices neither the base 1/ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</tex> noise nor the collector 1/ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</tex> noise is of the diffusion-fluctuation type. In the GE82 devices the collector 1/ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</tex> noise is not of the diffusion-fluctuation type, but the base 1/ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</tex> noise is of that type. We have given, also, a theory of the effects of surface recombination fluctuations in the emitter-base space-charge region on the base noise and the collector noise and find a noise spectrum that varies as <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I_\gamma</tex> where 0.5 < γ < 1.6 when going from small to large currents.