Hooge parameters for various FET structures

Abstract

We present here values for the Hooge parameters α <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</inf> of various FET structures that are one or more orders of magnitude smaller than the value 2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> that was first proposed. It cannot be said for certain which of these values are due to mobility-fluctuation noise and which represent number-fluctuation noise, but it seems reasonable to assume that the lowest values of α <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</inf> are more likely due to mobility fluctuations.