2002 · 19 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsCapacitanceClass Ab AmplifiersMicrowave TransistorsOutput ImpedanceOutput Impedance AnalysisPower Added EfficiencyPower EfficiencyRadio Frequency Power Amplifiers
The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically. We found that the transistor with low output capacitance operates in "inverse class AB", which facilitates high efficiencies. FE as high as 77% at 1.8 GHz with 3.5 V supply voltage have been obtained.
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RF power amplifiers for wireless communications
Steve Cripps · IEEE Microwave Magazine · 2000 · 2.3K citations
An ultra low-power RF bipolar technology on glass
Rommert Dekker, Peter Baltus, M. van Deurzen et al. · 2002 · 72 citations
1-W SiGe power HBTs for mobile communication
A. Schüppen, S. Gerlach, H.B. Dietrich et al. · IEEE Microwave and Guided Wave Letters · 1996 · 54 citations
A highly efficient 1.9-GHz Si high-power MOS amplifier
Isao Yoshida, M. Katsueda, Y. Maruyama et al. · IEEE Transactions on Electron Devices · 1998 · 38 citations