IEEE Transactions on Electron Devices · 1998 · 38 citations · 2 references
Low-power ElectronicsElectrical EngineeringCut-off FrequencyEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronicsElectronic EngineeringLow Supply VoltageOn-state ResistanceMicroelectronics
A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-/spl mu/m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance.
2
A complementary pair of planar-power MOSFET's
T. Okabe, Isao Yoshida, S. Ochi et al. · IEEE Transactions on Electron Devices · 1980 · 13 citations
Low-power Electronics, Device Modeling, Electrical Engineering +10