Reinhard Brock

QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

P. Deixler, Á. Rodríguez, Wiebe de Boer et al. · 2004 · 38 citations

Microwave Circuits, Electrical Engineering, Engineering +12

QUBIC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

P. Deixler, Ted Letavic, T. Mahatdejkul et al. · 2005 · 36 citations

Engineering, Device Integration, Electronic Design +16

Extraction of trapped charge in 4<i>H</i>-SiC metal oxide semiconductor field effect transistors from subthreshold characteristics

Sandeepan DasGupta, Reinhard Brock, Robert Kaplar et al. · Applied Physics Letters · 2011 · 34 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

QUBiC4: a silicon RF-BiCMOS technology for wireless communication ICs

D. Szmyd, Reinhard Brock, N. Bell et al. · 2002 · 32 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

QUBiC3: a 0.5 μm BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

A. Pruijmboom, D. Szmyd, Reinhard Brock et al. · 2002 · 31 citations

Engineering, Radio Frequency, Integrated Circuits +16