4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

Abstract

In this paper, for the first time, large area SiC BJTs were fabricated on SiC wafers with reduced Basal Plane Dislocations (BPDs). We have demonstrated: (1) stable performance on 1200 V, 20 A SiC BJTs after long duration of electrical stress at different current densities up to 150 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ; (2) a blocking yield of ≫80% with low leakage current (≪20 nA at 1800 V) on 3″ wafers along with current gains in a range of 35–40. Both breakthroughs highlight the possibility for SiC BJTs to be commercialized and utilized in power electronics.