2008 · 13 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignRadio-frequency Integrated CircuitsRf MemsCmos Radio-frequency CircuitsPower Management CircuitsPower Management Integrated CircuitsRf Cmos DesignRf Mems SwitchesRf SwitchesSilicon-on-insulator CmosSilicon-on-insulator Technology
We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation wireless system applications. The silicon SOI technology also includes the integration of a solid-state RF switch, and a RF power LDMOS transistor with good linear and saturated RF power characteristics in the frequency range between 0.8 GH - 2.4 GHz. We present measured results of MEMS and FET solid-state RF switches, RF power devices, as well as characterization data integrated power management circuits.
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The state-of-the-art of silicon-on-sapphire CMOS RF switches
Dylan Kelly, C. Brindle, C. Kemerling et al. · 2005 · 75 citations
0.13/spl mu/m CMOS SOI SP6T antenna switch for multi-standard handsets
C. Tinella, Olivier Richard, Andreia Cathelin et al. · 2006 · 35 citations