INTEGRATED MEMS SWITCH TECHNOLOGY ON SOI-CMOS

Abstract

We describe an RF MEMS contact switch technology that has been integrated above a 0.5um silicon RFCMOS-on-SOI process. This integration strategy combines a MEMS gold cantilever contact-switch with a custom silicon-on-insulator IC platform. This IC platform provides several power management functions critical for MEMS including high voltage generation, control and analog/digital/RF circuits... The technology also includes a waferlevel-package dielectric encapsulation process for the MEMS device which is hermetic and compatible with low cost packaging processes.