0.13/spl mu/m CMOS SOI SP6T antenna switch for multi-standard handsets

Abstract

This paper presents the design of a single pole 6 throw antenna switch able to manage all the four GSM standards, i.e. 850-900-1800-1900 MHz. The switch has been integrated in a 0.13mum CMOS SOI process with high resistivity substrate and a thick oxide (50Aring) option. The use of high resistivity substrate allows a good loss (IL)-isolation trade-off: IL is kept in the range of 0.55-0.8 dB for the RXs and at 0.7 dB for the TXs, while isolation varies from 40 dB at 900 MHz to 30 dB at 1900 MHz. Power handling capability is well compatible with GSM standards since an ICP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1dB</sub> of 36 dBm has been measured and harmonics distortion is below -39 dBm for an input power of 34 dBm. Robustness to antenna mismatching condition has been successfully demonstrated up to a VSWR of 10:1. The chip size is of 1.23 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2 </sup> and the power consumption is below 10muA and 0.5 mA respectively in stand by mode and during switching, under 2.5 voltage supply