Modeling of planar varactor frequency multiplier devices with blocking barriers

Abstract

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. The roles and and limitations of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) gave moderate efficiency but a broad range of power generation, whereas the devices with doped drift regions (BNN) have high efficiency in a narrower power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO/sub 2/-Si and AlAs-GaAs and means for increasing the power of BNN structures are considered.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>