IEEE Electron Device Letters · 2004 · 69 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrofabricationMicrowave EngineeringDevice SimulationHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit FabricationMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsInductor DesignInductorsMicrowave Integrated Circuit DesignMicrowave ModelingMillimeter-wave Integrated CircuitsRadio-frequency Integrated Circuit DesignRf Cmos DesignSilicon
The effect of metal thickness on the quality (Q-) factor of the integrated spiral inductor is investigated in this paper. The inductors with metal thicknesses of 5/spl sim/22.5 μm were fabricated on the standard silicon substrate of 1/spl sim/30 /spl Omega//spl middot/cm in resistivity by using thick-metal surface micromachining technology. The fabricated inductors were measured at GHz ranges to extract their major parameters (Q-factor, inductance, and resistance). From the experimental analysis assisted by FEM simulation, we first reported that the metal thickness' effect on the Q-factor strongly depends on the innermost turn diameter of the spiral inductor, so that it is possible to improve Q-factors further by increasing the metal thickness beyond 10 μm.
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A simple model of feedback oscillator noise spectrum
D.B. Leeson · Proceedings of the IEEE · 1966 · 2.4K citations