Advanced Materials · 2008 · 347 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsDevice ModelingDevice SimulationElectric CircuitsOxide SemiconductorsSemiconductor ReliabilitySemiconductor Thin FilmsAvalanche BreakdownBreakdown MechanismsElectrical BreakdownMetastable StatesPolycrystalline Thin FilmsResistive SwitchingResistive Switching Materials
The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi-metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2008/adma200702024_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
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Reproducible resistance switching in polycrystalline NiO films
Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations
Natural Sciences, Materials Engineering, Materials Science +16