Concepedia

Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes

Qiugui Zhou, Dion McIntosh, Han-Din Liu, Joe C. Campbell

IEEE Photonics Technology Letters · 2010 · 24 citations · 16 references

Abstract

We report reach-through structure 4H-SiC avalanche photodiodes isolated by proton implantation. These devices achieved low dark current (85 pA at a gain of 1000) and high external quantum efficiency ( 75% at 260 nm).

References

16

Ionization rates and critical fields in 4H silicon carbide

Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 398 citations

Engineering, Electrical Engineering, Materials Science +15

GaN avalanche photodiodes

John C. Carrano, Damien Lambert, C. J. Eiting et al. · Applied Physics Letters · 2000 · 256 citations

Engineering, Electrical Engineering, Materials Science +17

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

J. Limb, Dongwon Yoo, Jae‐Hyun Ryou et al. · Applied Physics Letters · 2006 · 108 citations

Engineering, Electrical Engineering, Materials Science +17

An optimized avalanche photodiode

H. Ruegg · IEEE Transactions on Electron Devices · 1967 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes

Xiaogang Bai, Xiangyi Guo, Dion McIntosh et al. · IEEE Journal of Quantum Electronics · 2007 · 79 citations

Engineering, Electrical Engineering, Electronic Materials +15

Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes

Concepts

Abstract

References