A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

Abstract

This paper presents a high-power and high-efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.8 dB small signal gain, 13.9% power-added efficiency, and 26.83 dBm (482 mW) compressed power output at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.2 dB, 11% power-added efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>