2002 · 31 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsMicrowave Amplifier CharacterizationMonolithic Microwave Integrated Circuit AmplifiersMonolithic Microwave Integrated CircuitsPower Added EfficiencyPower OutputRadio Frequency Power Amplifiers
A 34-36-GHz, 1-W, 9-dB-gain monolithic microwave integrated circuit (MMIC) power amplifier which utilizes 0.15- mu m pseudomorphic InGaAs-GaAs high-electron-mobility transistor (HEMT) process technology is discussed. Power amplifier sites across the wafer were fully characterized with an on-wafer pulsed large-signal S-parameter test set. Test results from these amplifier chips showed output powers >30 dBm, with >9-dB gain, and power-added efficiencies >20%. Overall chip size is 4.8 mm*2.3 mm. A two-stage power amplifier module using one chip to drive three chips has been developed. The resulting amplifier module has achieved 3-W output power and 17-dB gain from 34-36 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
3
High-power V-band pseudomorphic InGaAs HEMT
K.L. Tan, D.C. Streit, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 61 citations
A 0.15 mu m gate-length pseudomorphic HEMT
P.M. Smith, Ming-Yih Kao, P. Ho et al. · IEEE MTT-S International Microwave Symposium digest · 2003 · 32 citations