GaN as a displacement technology for silicon in power management

Abstract

For the past three decades, power management efficiency and cost have shown steady improvement as innovations in power MOSFET structures, technology, and circuit topologies have paced the growing need for electrical power in our daily lives. In the last few years, however, the rate of improvement has slowed as the silicon power MOSFET has asymptotically approached its theoretical bounds. We address the new game-changing power management products, available today and planned for the near future, that are built on Gallium Nitride grown on top of a silicon substrate. Enhancement mode devices (eGaN <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> FETs) are demonstrated in DC-DC conversion applications. Roadmaps for improved device performance and for system-on-chip integration will also be discussed. Performance is only one dimension of the equation leading to the conclusion that eGaN technology is a game changer. The other dimensions are product reliability, ease of use, and cost. These topics will also be discussed showing that the capability to displace silicon across a significant portion of the power management market is now in hand.