Hitoshi Haematsu is an author at Fujitsu (Japan) specializing in electrical engineering, engineering, and microelectronics.
Top concepts
EngineeringMicroelectronicsPower ElectronicsElectrical EngineeringAntennaElectronic EngineeringElectromagnetic CompatibilityLow-power ElectronicsMicrowave EngineeringHigh Voltage Engineering
Publications per year
2002–2011
5
5
Mass-Production of High-Voltage GaAs and GaN Devices
E. Mitani, Hitoshi Haematsu, S. Yokogawa et al. · 2006 · 20 citations
A 240 W push-pull GaAs power FET for W-CDMA base stations
Koji Inoue, Koji Ebihara, Hitoshi Haematsu et al. · 2002 · 17 citations
Low-power Electronics, Electrical Engineering, Engineering +13
Ruggedness and reliability of GaN HEMT
Fumikazu Yamaki, Kazutaka Inoue, Masahiro Nishi et al. · 2011 · 16 citations
An ultra broad band 300 W GaAs power FET for W-CDMA base stations
Koji Ebihara, Koji Inoue, Hitoshi Haematsu et al. · 2002 · 14 citations
A high gain L-band GaAs FET technology for 28V operation
Koji Inoue, Miyuki Nagahara, Norihiko Ui et al. · 2004 · 10 citations
Rows per page
1–5 of 5