Kazutaka Inoue

A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations

Hiroaki Deguchi, Norihiko Ui, Kaname Ebihara et al. · 2009 · 47 citations

Engineering, Electrical Engineering, Microelectronics +16

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Antonio Raffo, Valeria Vadalà, Hiroshi Yamamoto et al. · IEEE Transactions on Microwave Theory and Techniques · 2020 · 39 citations

Engineering, Electrical Engineering, Microelectronics +16

Ruggedness and reliability of GaN HEMT

Fumikazu Yamaki, Kazutaka Inoue, Masahiro Nishi et al. · 2011 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

A 65 % drain efficiency GaN HEMT with 200 W peak power for 20 V to 65 V envelope tracking base station amplifier

Fumikazu Yamaki, Kazutaka Inoue, Norihiko Ui et al. · 2011 IEEE MTT-S International Microwave Symposium · 2011 · 15 citations

Engineering, Electrical Engineering, Microelectronics +16

High power and high efficiency GaN-HEMT for microwave communication applications

Kazutaka Inoue, Norihiko Ui, Seigo Sano · 2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications · 2011 · 12 citations

Engineering, Electrical Engineering, Microelectronics +16