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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Aluminium NitridePhotonicsElectrical EngineeringInternal Quantum EfficiencyEngineeringSolid-state LightingPhysicsNanoelectronicsNano-patterned Sapphire SubstratesApplied PhysicsAluminum Gallium NitrideSignificant ImprovementOptoelectronics