IEEE Electron Device Letters · 2010 · 125 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesMemory DevicesMemory ModelingMemory StorageMemristive MaterialsConductive Filament FormationData RetentionMemory MaterialsMemristive MemoryNonvolatile Memory DevicesNonvolatile Memory MaterialsResistive Random-access MemoryRetention Characteristics
NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.
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Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al. · Nature · 2008 · 11.5K citations
Engineering, Electrical Engineering, Electronic Materials +5