IEEE Photonics Technology Letters · 1990 · 48 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsOptical AmplifiersOptical SourcesQuantum Well DevicesQuantum WellsSemiconductor LasersStrain EngineeringDegradationErbium-doped Fiber AmplifiersLasersPumpingQuantum Well LasersQuantum Well StructuresStrained Quantum WellsWaveguide Lasers
A maximum output power of 115 mW and a slope efficiency of 0.92 W/A have been achieved in 0.98- mu m InGaAs strained quantum well lasers with a 3- mu m-wide ridge waveguide structure for efficient fiber coupling. Stable operation of over 5000 h under 50 degrees C constant power operation with an optical power density of 3.9 MW/cm/sup 2/ has been demonstrated with a degradation rate as low as 5*10/sup -6/ per hour. These results show that this device is promising as a practical pumping source for Er/sup 3+/-doped fiber optical amplifiers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Piezo-Electroreflectance in Ge, GaAs, and Si
Fred H. Pollak, M. Cardona · Physical Review · 1968 · 852 citations
Natural Sciences, Materials Engineering, Materials Science +16
Long-lived InGaAs quantum well lasers
S.E. Fischer, R. G. Waters, D. Fekete et al. · Applied Physics Letters · 1989 · 66 citations