Electronics Letters · 1984 · 44 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsGrain Structure AnalysisSemiconductor Device MaterialsExperimental Results InterpretationGauge Factor OptimizationPiezoresistive MaterialsPolysiliconPolysilicon Processing
A theoretical model for piezoresistance in polysilicon is described. Grain size, orientation and doping dependence effects are included. Predictions of gauge factor using the model give reasonable agreement with experimental results and enable optimum processing parameters to be chosen for a given grain size.
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