IEEE Photonics Technology Letters · 2002 · 16 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsOptoelectronicsSemiconductor DevicesOptical Properties Of SemiconductorsOptoelectronic DevicesPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsWide Band Gap SemiconductorsAvalanche GainAvalanche PhotodiodesBreakdown VoltageExternal Quantum EfficiencyOptical Absorption CoefficientP-i-n PhotodetectorsPhotodetector MaterialsQuantum Efficiency
We demonstrate a GaAsSb resonant-cavity-enhanced p-i-n photodetector grown on a GaAs substrate. The device exhibited a peak external quantum efficiency of 54% at the wavelength of 1.3 μm and a full-width at half-maximum of 8 nm. The breakdown voltage was 12 V and avalanche gain up to ten was observed. The absorption coefficient (/spl alpha/) of GaAs/sub 0.65/Sb/sub 0.35/ at 1.3 μm is estimated to be /spl sim/7.3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> /cm.
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1.3 μm room-temperature GaAs-based quantum-dot laser
Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations
Low threshold, wafer fused long wavelength vertical cavity lasers
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