IEEE Electron Device Letters · 2000 · 25 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous Electronic MaterialsSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin Film Electrical PropertiesThin-film TransistorsAmorphous SiliconAmorphous Silicon Thin-film TransistorsCrystalline SiliconCrystallization In Thin FilmsPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsThin-film CrystallizationThreshold Voltage
Electric field enhanced silicide mediated crystallization (SMC) was introduced for low-temperature polycrystalline silicon thin-film transistors (TFTs) on glass substrates. The amorphous silicon (a-Si) film having an average Ni thickness of 0.15 /spl Aring/, was completely crystallized at a temperature of 480/spl deg/C within 30 min in the presence of an electric field of 40 V/cm. The poly-Si is composed of needlelike crystallites with a few μm length and about 50 nm width. The poly-Si TFT using the SMC exhibited a field effect mobility of 86 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, a threshold voltage of -0.6 V, and a subthreshold slope of 0.6 V/dec.
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Electric-field-enhanced crystallization of amorphous silicon
Jin Jang, Jae Young Oh, Sung Ki Kim et al. · Nature · 1998 · 203 citations
Natural Sciences, Materials Engineering, Materials Science +14