Silicon MOS controlled bipolar power switching devices using trench technology

Abstract

Abstract The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current flow. In this paper we give a review of development of trench gate IGBTs and we describe briefly new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.