J. Thomson

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

Florin Udrea, S.S.M. Chan, J. Thomson et al. · IEEE Electron Device Letters · 1999 · 27 citations

Low-power Electronics, Electrical Engineering, Art Igbt +13

Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology

Konstantin Vershinin, M. Sweet, L. Ngwendson et al. · 2006 · 18 citations

Experimental Results, Electrical Engineering, Tcigbt Device +11

Silicon MOS controlled bipolar power switching devices using trench technology

T. Trajković, Florin Udrea, G.A.J. Amaratunga et al. · International Journal of Electronics · 1999 · 13 citations

Electrical Engineering, Engineering, Power Device +9

The correlation between material properties and HBT reliability

S.L. Delage, S. Cassette, M. A. Di-Forte Poisson et al. · AMS Acta (University of Bologna) · 1999 · 11 citations · Full text

Materials Science, Semiconductors, Materials Engineering +15

Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Florin Udrea, T. Trajković, J. Thomson et al. · 2002 · 10 citations

3D Ic Architecture, Electrical Engineering, Engineering +13