L. Ngwendson

A novel trench clustered insulated gate bipolar transistor (TCIGBT)

O. Spulber, M. Sweet, Konstantin Vershinin et al. · IEEE Electron Device Letters · 2000 · 24 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non Punch Through Technology

Konstantin Vershinin, M. Sweet, L. Ngwendson et al. · 2006 · 18 citations

Experimental Results, Electrical Engineering, Tcigbt Device +11

A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low V<inf>CE(ON)</inf>, enhanced current handling capability and short circuit robustness

Ian Deviny, Haihui Luo, Qiang Xiao et al. · 2017 · 15 citations

Clustered insulated gate bipolar transistor: a new power semiconductor device

M. Sweet, O. Spulber, J.V. Subhas Chandra Bose et al. · IEE Proceedings - Circuits Devices and Systems · 2001 · 11 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Performance Evaluation of 10-kV SiC Trench Clustered IGBT

Kalyani Menon, Akira Nakajima, L. Ngwendson et al. · IEEE Electron Device Letters · 2011 · 11 citations

Electrical Engineering, Engineering, Power Device +10