EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsShort-channel EffectsBuried Channel DevicesFully Depleted Silicon-on-insulator TransistorsGate Oxide InterfacesSelf-aligned StructuresSiliconSilicon-on-insulator Technology
We report the fabrication and the electrical characteristics of fully depleted n-channel SOI MOSFETs with a self-aligned ground-plane electrode in the silicon mechanical substrate underneath the buried oxide. The ground-plane electrode is shown to reduce short-channel effects.
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