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Forming-free HfO<inf>2</inf> bipolar RRAM device with improved endurance and high speed operation
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References
2009
Year
Unknown Venue
Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyComputer MemoryForming-free HfoMemory DeviceMemory DevicesHigh Speed OperationElectrical EngineeringElectronic MemoryFast Operation SpeedRobust EnduranceMicroelectronicsMemory ReliabilityApplied PhysicsBipolar Rram DeviceSemiconductor MemoryResistive Random-access Memory
In this paper, the bipolar resistive switching memory using HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film with a TiN/Ti bi-layer electrode is reported. A robust endurance (>106 cycles) and long data retention (>10 years at 200degC) of this memory device was achieved. The memory also shows fast operation speed (~10 ns), low operation power and capability of multi-level operation.
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