Advanced materials research · 2013 · 15 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsRadiation DosimetryRadiation MeasurementDevice CharacterizationDevice ModelingDevice SimulationHardware Modeling For Digital SystemsCompact Model Parameter ExtractionHardware-software IntegrationModel ExtractionMosfet ModelingParameter ExtractionPhysics-based Device ModelingRadiation EffectsRadiation-hardening Techniques
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
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