Konstantin O. Petrosyants

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Publications

Citations

188

H-Index

Active since

2011

Affiliations

Moscow State Institute of Electronics and Mathematics(Current)

Institute for Design Problems in Microelectronics

National Research University Higher School of Economics

Chinese Academy of Sciences

Institute of Microelectronics

Konstantin O. Petrosyants is an author at Moscow State Institute of Electronics and Mathematics specializing in electrical engineering, engineering, and microelectronics.

ORCID

Publications per year

2011–2022

Publications

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

Konstantin O. Petrosyants, D. S. Silkin, Dmitriy A. Popov · Micromachines · 2022 · 20 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Physical TCAD Model for Proton Radiation Effects in SiGe HBTs

Konstantin O. Petrosyants, Maxim V. Kozhukhov · IEEE Transactions on Nuclear Science · 2016 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +17

Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C)

Konstantin O. Petrosyants, I. A. Kharitonov, S. V. Lebedev et al. · Microelectronics Reliability · 2017 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +16

Automation of parameter extraction procedure for Si JFET SPICE model in the −200…+110°C temperature range

Konstantin O. Petrosyants, Mamed R. Ismail-zade, Lev M. Sambursky et al. · 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT) · 2018 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +13

Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

Konstantin O. Petrosyants, I. A. Kharitonov, Lev M. Sambursky · Advanced materials research · 2013 · 15 citations · Full text

Engineering, Electrical Engineering, Microelectronics +14

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