2002 · 19 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignRadiation HardeningCompact Model Parameter ExtractionMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingParameter ExtractionRadiation EffectsRadiation HardnessRadiation-hard DevicesRadiation-hardened Integrated Circuits
The united SOI/SOS MOSFET model adapted to SPICE is proposed for VLSI radiation hardness simulation. The procedure for MOS transistor model parameters definition using the test structures is developed. The examples of parameter extraction for irradiated SOI/SOS devices with different configurations are demonstrated. ICs operated under different doses of irradiation were modeled. The results of modeling are in good agreement with the experimental data.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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