Publication | Closed Access
High capability, quasi-closed growth system for isothermal vapour phase epitaxy of (Hg, Cd)Te
19
Citations
4
References
1988
Year
Materials ScienceIi-vi SemiconductorEngineeringApplied PhysicsHigh CapabilityMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorChemical Vapor DepositionQuasi-closed Growth System
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