High-performance photovoltaic infrared devices in Hg1−<i>x</i>Cd<i>x</i>Te on GaAs

Abstract

A combination of organometallic and isothermal vapor phase epitaxy was used sequentially to grow CdTe and Hg1−xCdxTe on GaAs substrates. Photodiodes in the Hg1−xCdxTe show properties comparable to the best Hg1−xCdxTe grown by liquid phase epitaxy. Resistance-area products were ≥107 Ω cm2 and &amp;gt;104 Ω cm2 at 77 K for Hg1−xCdxTe with cut-off wavelength of 3.73 and 5.54 μm at 77 K, respectively. The backside-illuminated spectral response was broadband with peak external quantum efficiencies typically &amp;gt;50% (without antireflection coating).