Molecular beam epitaxial growth of BGaAs ternary compounds

Preparation and Properties of Boron Arsenides and Boron Arsenide-Gallium Arsenide Mixed Crystals

S. M. Ku · Journal of The Electrochemical Society · 1966 · 94 citations

Engineering, Materials Science, Physics +15

The Use of Metalorganics in the Preparation of Semiconductor Materials: VIII . Feasibility Studies of the Growth of Group III ‐Group V Compounds of Boron by MOCVD

H. M. Manasevit, W. B. Hewitt, A. J. NELSON et al. · Journal of The Electrochemical Society · 1989 · 79 citations

Engineering, Materials Engineering, Materials Science +16

Molecular beam epitaxy growth of boron-containing nitrides

Varun Gupta, C.C. Wamsley, Maximilian Koch et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +13

Molecular-beam epitaxial growth of boron-doped GaAs films

W. E. Hoke, P. J. Lemonias, D. G. Weir et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 24 citations

Natural Sciences, Materials Science, Physics +17

Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As

M. A. Tischler, P. M. Mooney, B. Parker et al. · Journal of Applied Physics · 1992 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +16