D. G. Weir

Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

W. E. Hoke, P. J. Lemonias, D. G. Weir · Journal of Crystal Growth · 1991 · 74 citations

Physics, Applied Physics, Aluminum Gallium Nitride +5

Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy

W. E. Hoke, P. J. Lemonias, D. G. Weir et al. · Journal of Applied Physics · 1991 · 32 citations

Engineering, Graphite Filament, Lattice Contraction +16

Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament

W. E. Hoke, P. J. Lemonias, P. S. Lyman et al. · Journal of Crystal Growth · 1991 · 29 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Molecular-beam epitaxial growth of boron-doped GaAs films

W. E. Hoke, P. J. Lemonias, D. G. Weir et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 24 citations

Materials Science, Semiconductors, Engineering +13

Carbon tetrabromide carbon doping of molecular beam epitaxial (GaAs) films

W. E. Hoke, D. G. Weir, P. J. Lemonias et al. · Applied Physics Letters · 1994 · 23 citations

Materials Science, Semiconductors, Semiconductor Technology +15